protection products 1 www.semtech.com preliminary protection products - railclamp ? ? ? ? ? rclamp3374N high power tvs for ethernet interfaces description features circuit diagram pin configuration revision 7/24/2012 applications mechanical characteristics top view center tabs pin 1 pin 10 line 1 out line 1 in pin 2 line 2 in pin 9 line 2 out pin 4 line 3 in pin 7 line 3 out pin 5 line 4 in pin 6 line 4 out and pins 3, 8 1 5 gnd gnd gnd 10 6 gnd gnd line 1 out line 2 out line 3 out line 4 out line 1 in line 2 in line 3 in line 4 in railclamp ? tvs diodes are specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvolt- age caused by esd (electrostatic discharge), cde (cable discharge events), and eft (electrical fast transients). the unique design incorporates surge rated, low capacitance steering diodes and a tvs diode in a single package. the rclamp ? 3374N is designed to replace up to two components for board level gbe protection. each device is designed to protect two line pairs. this is accomplished by routing traces through the device. when connected in this fashion, the device can withstand a high level of surge current (40a, 8/ 20us) while maintaining a low loading capacitance of less than 5pf. the high surge capability means it can be used in high threat environments in applications such as gigabit ethernet, telecommunication lines, and lvds interfaces. the rclamp3374N is constructed using semtech?s proprietary epd process technology. the epd process provides low stand-off voltages with significant reduc- tions in leakage current and capacitance over silicon- avalanche diode processes. it features a true operat- ing voltage of 3.3 volts for superior protection. the rclamp3374N is in a 10-pin slp3020n10 pack- age. it measures 3.0 x 2.0 x 0.60mm. the leads are finished with lead-free nipdau. ? transient protection for high-speed data lines to iec 61000-4-2 (esd) 30kv (air), 30kv (contact) iec 61000-4-4 (eft) 40a (5/50ns) iec 61000-4-5 (lightning) 40a (8/20 s) ? array of surge rated diodes with internal tvs diode ? qualified to aec-q100 grade 1 (-45 to +125 o c) ? protects up to eight lines ? low capacitance for high-speed interfaces ? low variation in capacitance vs. bias voltage ? low clamping voltage ? low operating voltage: 3.3v ? solid-state silicon-avalanche technology ? slp3020n10 10l package ? pb-free, halogen free, rohs/weee compliant ? nominal dimensions: 3.0 x 2.0 x 0.60 mm ? lead finish: nipdau ? molding compound flammability rating: ul 94v-0 ? marking : marking code + date code ? packaging : tape and reel ? 10/100/1000 ethernet ? automotive ? central office equipment ? lvds interfaces ? magjacks / integrated magnetics ? notebooks / desktops / servers
2 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N absolute maximum rating electrical characteristics (t=25 o c unless otherwise specified) g n i t a rl o b m y se u l a vs t i n u ) s 0 2 / 8 = p t ( r e w o p e s l u p k a e p 1 p k p 0 0 0 1s t t a w ) s 0 2 / 8 = p t ( t n e r r u c e s l u p k a e p 1 i p p 0 4a ) r i a ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e ) t c a t n o c ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e v d s e 0 3 - / + 0 3 - / + v k e r u t a r e p m e t g n i t a r e p ot j 5 2 1 + o t 0 4 -c e r u t a r e p m e t e g a r o t st g t s 0 5 1 + o t 5 5 -c r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v f f o - d n a t s e s r e v e rv m w r 3 . 3v e g a t l o v h g u o r h t - h c n u pv t p i t p a 2 =5 . 3v e g a t l o v k c a b - p a n sv b s i b s a m 0 5 =8 . 2v t n e r r u c e g a k a e l e s r e v e ri r v m w r c 5 2 = t , v 3 . 3 =5 . 0a t n e r r u c e g a k a e l e s r e v e ri r v m w r c 5 2 1 = t , v 3 . 3 =1a e g a t l o v g n i p m a l c 2 v c i p p t , a 1 = p s 0 2 / 8 = d n u o r g o t o / i y n a 5 . 5v e g a t l o v g n i p m a l c 2 v c i p p t , a 0 1 = p s 0 2 / 8 = d n u o r g o t o / i 1 y n a 5 . 0 1v e g a t l o v g n i p m a l c 2 v c i p p t , a 5 2 = p s 0 2 / 8 = d n u o r g o t o / i y n a 8 1v e g a t l o v g n i p m a l c 2 , 1 v c i p p t , a 0 4 = p s 0 2 / 8 = s n i p o / i o w t , e n i l - o t - e n i l h c a e n o r e h t e g o t d e t c e n n o c ) 1 e t o n ( e n i l 5 2v e c n a t i c a p a c n o i t c n u j 2 c j v r z h m 1 = f , v 0 = d n u o r g o t o / i y n a 6 . 35f p v r z h m 1 = f , v 0 = s n i p o / i n e e w t e b 7 . 1f p notes: 1) ratings with 2 pins connected together per the recommended configuration (ie pin 1 connected to pin 10, pin 2 connected to p in 9, pin 4 connected to pin 7, and pin 5 connected to pin 6). 2) guaranteed by design (not production tested)
3 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N typical characteristics non-repetitive peak pulse power vs. pulse time clamping voltage vs. peak pulse current 0.1 1 10 0.1 1 10 100 1000 pulse duration - tp (us) peak pulse power - p pp (kw) power derating curve 0 5 10 15 20 25 0 1020304050 peak pulse current - ipp (a) clamping voltage - vc(v) i/o to gnd i/o to i/o 2 i/o to gnd 2 i/o to 2 i/o waveform parameters: tr = 8s td = 20s 0 5 10 15 20 25 30 024681012 voltage (v) current (a) r dyn =0.23 ohms tlp parameters: tp = 100ns tr = 200ps typical tlp characteristic capacitance vs. reverse voltage forward clamping voltage vs. peak pulse current 0 5 10 15 0 1020304050 peak pulse current - ipp (a) clamping voltage - vc(v) gnd to 1 i/o gnd to 2 i/o 0.0 1.0 2.0 3.0 4.0 5.0 01234 reverse voltage - v r (v) capacitance - c j (pf) i/o to gnd i/o to i/o f = 1 mhz 0 20 40 60 80 100 120 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp
4 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N typical characteristics (con?t) insertion loss s21 (i/o to gnd) insertion loss s21 (i/o to i/o) 1 2 3 4 5 start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db 1: - 0.5954 db 800 mhz 2: - 0.6386 db 900 mhz 3: - 1.9606 db 1.8 ghz 4: - 4.3959 db 2.5 ghz 5: - 5.2975 db 2.7 ghz 0 db -6 db -12 db -18 db -24 db -30 db -36 db 1 ghz 100 mhz 3 ghz 10 mhz 1 mhz -42 db -48 db 1 2 3 4 5 start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db 1: - 0.3708 db 800 mhz 2: - 0.3976 db 900 mhz 3: - 1.3979 db 1.8 ghz 4: - 3.4436 db 2.5 ghz 5: - 4.3385 db 2.7 ghz 0 db -6 db -12 db -18 db -24 db -30 db -36 db 1 ghz 100 mhz 3 ghz 10 mhz 1 mhz -42 db -48 db insertion loss s21 (2 i/o to gnd) insertion loss s21 (2 i/o to 2 i/o) 1 2 3 4 5 start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db 1: - 2.3263 db 800 mhz 2: - 2.5056 db 900 mhz 3: - 5.7891 db 1.8 ghz 4: - 9.2386 db 2.5 ghz 5: - 10.111 db 2.7 ghz 0 db -6 db -12 db -18 db -24 db -30 db -36 db 1 ghz 100 mhz 3 ghz 10 mhz 1 mhz -42 db -48 db 1 2 3 4 5 start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 6 db / ref 0 db 1: - 1.1102 db 800 mhz 2: - 1.1958 db 900 mhz 3: - 3.4256 db 1.8 ghz 4: - 6.8820 db 2.5 ghz 5: - 7.9734 db 2.7 ghz 0 db -6 db -12 db -18 db -24 db -30 db -36 db 1 ghz 100 mhz 3 ghz 10 mhz 1 mhz -42 db -48 db
5 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N typical characteristics (con?t) start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 20db / ref 0 db 0 db -20 db -40 db -60 db -80 db -100 db -120 db -140 db -160 db analog crosstalk (i/o to gnd) analog crosstalk (i/o to i/o) start . 030 mhz 3 stop 000 . 000 000 mhz ch1 s21 log 20db / ref 0 db 0 db -20 db -40 db -60 db -80 db -100 db -120 db -140 db -160 db esd clamping - i/o to gnd (8kv contact per iec 61000-4-2) 0 10 20 30 40 50 60 -20 0 20 40 60 80 time (ns) clamping voltage (v)
6 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N applications information device connection options for protection of four high-speed data lines this device is designed to protect four high-speed data lines (two line pairs). it has been optimized for use on ethernet interfaces where large magnitude lightning and esd surges are expected. the rclamp3374N is constructed using semtech?s proprietary epd process technology. the epd process provides low stand-off (turn-on) voltages with significant reductions while maintaining good clamping characteristics and high surge capability. they feature a true operating voltage of 3.3 volts. each i/o pin pair features a low capacitance steering diode bridge that is designed to route harmful surge current into the internal low voltage tvs diode. each data pair is rated to withstand 1000 watts of surge power (8/20us impulse waveform). when placed on the phy side of the magnetics, it can be used to meet the requirements of telcordia gr-1089, k.20, k.21, and other high energy surge standards. the rclamp3374N is designed with a flow through pin configuration for easy layout. in a gbe application, tx+ and tx- lines would enter at pins 1, 2, 4, and 5 and exit at pins 10, 9, 7, and 6 respectively. the traces should be unbroken and run under the device as shown. pins 3 and 8 are electrically connected to the three center ground tabs. in a typical ethernet application, these pins as well as the tabs should be left floating (i.e. not connected to ground). layout example pin configuration 1 5 gnd gnd gnd 10 6 gnd gnd tx1+ out tx1- out tx2+ out tx2- out tx1+ in tx1- in tx2+ in tx2- in
7 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N applications information gigabit ethernet protection solutions ethernet systems with connections external to the building are subject to high-level transient threats. this type of equipment may even be required to meet the surge immunity requirements of telcordia gr- 1089. reliable protection of the ethernet transceiver requires a device that can absorb the expected transient energy, clamp the incoming surge to a safe level, and yet remain transparent to the system under normal operation. the rclamp3374N has been designed to meet these demanding requirements. transient protection when designing ethernet protection, the entire system must be considered. an ethernet port includes interface magnetics in the form of transformers and common mode chokes. transformers and chokes can be discrete components, but integrated solutions that include the rj-45 connector, resistors, capacitors, and protection are also available. in either case, the transformer will provide a high level of common mode isolation to external voltages, but no protection for metallic (line-to-line) surges. during a metallic transient event, current will flow into one line, through the transformer and back to the source. as the current flows, it charges the windings of the transformer on the line side. once the surge is removed, the windings on the line side will stop charging and will transfer its stored energy to the ic side where the phy ic is located. the magnitude and figure 1 - gbe protection to lightning, esd, and cde duration of the surge is attenuated by the inductance of the magnetics. the amount of attenuation will vary by vendor and configuration of the magnetics. it is this transferred energy that must be clamped by the protection circuitry. a typical protection scheme which utilizes the rclamp3374N is shown in figure 1. one device is placed across two line pairs and is located on the phy side of the transformer as close to the magnetics as possible. this is done to minimize parasitic inductance and improve clamping performance. in this design, the isolation voltage of the transformer is relied upon to suppress common mode lightning surges. high voltage capacitors and resistors are commonly utilized from the center tap to ground to aid in transient protection. metallic surges will be transferred in some form to the phy side and clamped by the rclamp3374N . the rclamp3374N will turn on when the voltage across it exceeds the punch-through voltage of the device. low voltage turn on is important since many phy chips have integrated esd protection structures. these structures are for protection of the device during manufacture and are not designed to handle large amounts of energy. should they turn on before the external protection, they can be damaged resulting in failure of the phy chip. 1 2 3 4 5 6 7 8 rj-45 connector gbe ethernet phy tp2+ tp2- tp3+ tp3- tp4+ tp4- tp1+ tp1- rclamp3374N rclamp3374N 1 2 3 4 5 6 7 8 rj-45 connector gbe ethernet phy tp2+ tp2- tp3+ tp3- tp4+ tp4- tp1+ tp1- rclamp3374N rclamp3374N
8 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N outline drawing - so-8 land pattern - slp3020n10 outline drawing - slp3020n10 controlling dimensions are in millimeters (angles in degrees). notes: 1. pin 1 indicator (laser mark) bbb c a b seating plane d e b1 bbb aaa n e dim a1 a2 a 0.45 0.25 0.35 0.08 0.10 10 0.60 bsc millimeters max 0.05 0.65 dimensions min 0.00 nom 0.50 0.03 (0.15) 0.60 3.00 d e 2.00 3.10 2.90 1.90 2.10 l 0.35 0.25 0.30 l1 1.05 0.95 1.00 e2 0.95 bsc aaa c a b c a2 a1 a e e1 bxn lxn e/2 e2 12 n 3x b1 3x l1 d/2 b 0.25 0.15 0.20 e1 0.65 bsc l1 /2 this land pattern is for reference purposes only. consult your manufacturing group to ensure your notes: 2. 0.50 y1 y g z x (c) x1 dim x1 y1 p millimeters 0.40 1.00 0.60 dimensions company's manufacturing guidelines are met. 2.56 z g 1.40 c (1.98) controlling dimensions are in millimeters (angles in degrees). 1. y 0.58 x 0.25 p2 0.95 p2 p p1 p1 0.65
9 ? 2012 semtech corporation www.semtech.com preliminary protection products rclamp3374N marking codes ordering information carrier tape specification railclamp and rclamp are trademarks of semtech corporation yyww = date code r e b m u n t r a p g n i k r o w e g a t l o v r e p y t q l e e r e z i s l e e r t c t . n 4 7 3 3 p m a l c rs t l o v 3 . 30 0 0 , 3h c n i 7 1 3374N yyww device orientation in tape 0 a0 b0 k m m 5 0 . 0 - / + 4 2 . 2m m 5 0 . 0 - / + 3 2 . 3m m 5 0 . 0 - / + 3 9 . 0 e p a t h t d i w ) x a m ( , bd1 de f k ) x a m ( p0 p2 p) x a m ( tw m m 8m m 2 . 4 m m 1 . 0 + 5 . 1 ) m m 0 . 0 - m m 5 . 0 5 0 . 0 0 1 . 0 5 7 . 1 m m 5 0 . 0 5 . 3 m m m m 4 . 2 1 . 0 0 . 4 m m 1 . 0 0 . 4 m m 5 0 . 0 0 . 2 m m m m 4 . 0 m m 0 . 8 m m 3 . 0 + m m 1 . 0 - pin 1 location (towards sprocket holes) user direction of feed 3374N yyww 3374N yyww 3374N yyww contact information semtech corporation protection products division 200 flynn road, camarillo, ca 93012 phone: (805)498-2111 fax (805)498-3804
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